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 TP0606 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS -60V RDS(ON) (max) 3.5 ID(ON) (min) -1.5A VGS(th) (max) -2.4V Order Number / Package TO-92 TP0606N3
Features
Low threshold -- -2.4V max High input impedance Low input capacitance -- 80pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches
Package Options
Absolute Maximum Ratings
SGD
Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds.
BVDSS BVDGS 20V -55C to +150C 300C
TO-92
Note 1: See Package Outline section for dimensions. Note 2: See Array section for quad pinouts.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
TP0606
Thermal Characteristics
Package TO-92 ID (continuous)* 0.32A ID (pulsed) -3.5A Power Dissipation @ TC = 25C 1W
jc
ja
IDR* 0.32A
IDRM -3.5A
C/W
125
C/W
170
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25C unless otherwise specified)
Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -60 -1.0 -2.4 -5.0 -100 -10 -1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 300 400 80 50 15 150 85 35 10 15 20 15 -1.8 V ns VGS = 0V, ISD = -1.0A VGS = 0V, ISD = -1.0A ns pF VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ID = -1.0A RGEN = 25 -0.4 -1.5 -0.6 -2.5 5.0 3.0 7.0 3.5 1.7 %/C m A Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = -2.0mA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -250mA VGS = -10V, ID = -0.75A VGS = -10V, ID = -0.75A VDS = -25V, ID = -0.75A
Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE GENERATOR 90%
t(ON) Rgen
t(OFF) tr td(OFF) tF
INPUT
td(ON)
0V
90% OUTPUT
VDD
90% 10%
10%
2
D.U.T. OUTPUT RL
VDD
TP0606
Typical Performance Curves
Output Characteristics
-5 -5
Saturation Characteristics
-4
-4
ID (amperes)
ID (amperes)
-3 VGS = -10V -2 -8V -1
-3 VGS = -10V -2 -8V -1 -6V -4V 0
-6V -4V
0 0 -10 -20 -30 -40 -50
0
-2
-4
-6
-8
-10
VDS (volts) Transconductance vs. Drain Current
0.6 2.0
VDS (volts) Power Dissipation vs. Case Temperature
VDS = -25V VDS = -25V
0.5
T A = -55C
GFS (siemens)
T A = 25C
PD (watts)
0.4
TO-92 1.0
T A = 150C
0.3
0.2
0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2
0 0 25 50 75 100 125 150
ID (amperes) Maximum Rated Safe Operating Area
-10 1.0 T C = 25C
TC (C) Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
ID (amperes)
-1.0
0.6
0.4
-0.1
TO-92 (DC)
0.2
TO-92 P D = 1W T C = 25C
0.01 0.1 1 10
-0.01 -1 -10 -100 -1000
0 0.001
VDS (volts)
tp (seconds)
3
TP0606
Typical Performance Curves
BVDSS Variation with Temperature
1.1 15
On-Resistance vs. Drain Current
12
VGS = -5V
BVDSS (normalized)
RDS(ON) (ohms)
9
1.0
VGS = -10V
6
3
0.9 -50 0 50 100 150
0 0 -0.8 -1.6 -2.4 -3.2 -4.0
Tj (C) Transfer Characteristics
-5 1.4
ID (amperes) V(th) and RDS Variation with Temperature
2.0
VDS = -25V
-4
VGS(th) (normalized)
1.2 1.2 1.0 0.8 0.8
-3
=
-2
-
55
C
TA
= TA C 25
V(th) @ -1mA
0.4
-1
TA
0 0 -2 -4 -6
5 =1
0
C
0.6
0 -8 -10 -50 0 50 100 150
VGS (volts) Capacitance vs. Drain-to-Source Voltage
200 -10
Tj (C) Gate Drive Dynamic Characteristics
f = 1MHz
-8 150
VDS = -10V
C (picofarads)
200 pF
VGS (volts)
-6
100
CISS
COSS
-4
VDS = -40V
50
-2
CRSS
0 0 -10 -20 -30 -40 0 0
75 pF
0.5 1.0 1.5 2.0 2.5
VDS (volts)
QG (nanocoulombs)
(c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com
RDS(ON) (normalized)
11/12/01
RDS(ON) @ -10V, -0.75A
1.6
ID (amperes)


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